GOFORD G75P04D5

GOFORD · FETs & Power MOSFETs · MPN G75P04D5

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Specifications

Gate Charge(Qg)106nC
Drain to Source Voltage40V
Output Capacitance(Coss)707pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)671pF
RDS(on)4.7mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.697nF
Vgs±20V

Technical details

40V 80A 1.7V 115W 4.7mΩ@10V 1 P-Channel P-Channel DFN5x6-8L Single FETs, MOSFETs RoHS

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