GOFORD G70N04T

GOFORD · FETs & Power MOSFETs · MPN G70N04T

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Specifications

Gate Charge(Qg)50nC
Drain to Source Voltage40V
Output Capacitance(Coss)179pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)159pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.169nF
Vgs±20V

Technical details

N-Channel 40V 70A 104W Through Hole TO-220

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