GOFORD G700P06H

GOFORD · FETs & Power MOSFETs · MPN G700P06H

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Specifications

Gate Charge(Qg)15.8nC
Drain to Source Voltage60V
Output Capacitance(Coss)62pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)59pF
RDS(on)60mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.459nF
Vgs±20V

Technical details

P-Channel 60V 5A 3.1W Surface Mount SOT-223

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