GOFORD G700P06D5

GOFORD · FETs & Power MOSFETs · MPN G700P06D5

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Specifications

Gate Charge(Qg)25nC
Drain to Source Voltage60V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)58mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.451nF
Vgs±20V

Technical details

P-Channel 60V 25A 42W Surface Mount DFN5x6-8L

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