GOFORD · FETs & Power MOSFETs · MPN G6N90F
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| Drain to Source Voltage | 900V |
|---|---|
| Gate Charge(Qg) | 25nC |
| Output Capacitance(Coss) | 20pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 69W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 2.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.06nF |
| Vgs | ±30V |
N-Channel 900V 9A 69W Through Hole TO-220F