GOFORD · FETs & Power MOSFETs · MPN G6N02L-BQ
No reviews yet — be the first to review GOFORD G6N02L-BQ.
| Output Capacitance(Coss) | 160pF |
|---|---|
| Pd - Power Dissipation | 1W |
| Configuration | - |
| Drain to Source Voltage | 20V |
| Gate Charge(Qg) | 12.5nC |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Reverse Transfer Capacitance (Crss@Vds) | 152pF |
| RDS(on) | 9.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.151nF |
N-Channel 20V 9A 1W Surface Mount SOT-23-3