GOFORD G6N02L-B

GOFORD · FETs & Power MOSFETs · MPN G6N02L-B

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Specifications

Gate Charge(Qg)12.5nC
Drain to Source Voltage20V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1W
RDS(on)13mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)152pF
Number1 N-channel
Input Capacitance(Ciss)1.151nF
Vgs±12V

Technical details

20V 6A 1W Surface Mount SOT-23-3L

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