GOFORD G6K8P15SE

GOFORD · FETs & Power MOSFETs · MPN G6K8P15SE

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Specifications

Gate Charge(Qg)11nC
Drain to Source Voltage150V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)660mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.572nF
Vgs±20V

Technical details

P-Channel 150V 6A 3W Surface Mount SOP-8

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