GOFORD G6K8P15KE

GOFORD · FETs & Power MOSFETs · MPN G6K8P15KE

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Specifications

Gate Charge(Qg)11nC
Drain to Source Voltage150V
Output Capacitance(Coss)31pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)570mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.55nF
Vgs±20V

Technical details

P-Channel 150V 12A 60W Surface Mount TO-252

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