GOFORD · FETs & Power MOSFETs · MPN G60N10T
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 120nC |
| Output Capacitance(Coss) | 176pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 132W |
| Reverse Transfer Capacitance (Crss@Vds) | 164pF |
| RDS(on) | 14mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6nF |
| Vgs | ±20V |
N-Channel 100V 60A 132W Through Hole TO-220