GOFORD G60N04K

GOFORD · FETs & Power MOSFETs · MPN G60N04K

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Specifications

Gate Charge(Qg)42nC
Drain to Source Voltage40V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation65W
Reverse Transfer Capacitance (Crss@Vds)153pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.35nF
Vgs±20V

Technical details

N-Channel 40V 60A 65W Surface Mount TO-252

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