GOFORD · FETs & Power MOSFETs · MPN G60N04D52
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| Current - Continuous Drain(Id) | 60A |
|---|---|
| Pd - Power Dissipation | 65W |
| RDS(on) | 7.2mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.35nF |
| Gate Charge(Qg) | 42nC |
| Vgs | ±20V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 30V 35A 20W Surface Mount DFN-8(5x6)