GOFORD G60KN30I

GOFORD · FETs & Power MOSFETs · MPN G60KN30I

No reviews yet — be the first to review GOFORD G60KN30I.

Specifications

Gate Charge(Qg)2.5nC
Drain to Source Voltage300V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation710mW
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)4.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)68pF
Vgs±30V

Technical details

N-Channel 300V 0.3A 0.71W Surface Mount SOT-23

Related FETs & Power MOSFETs