GOFORD G5K9N20LL

GOFORD · FETs & Power MOSFETs · MPN G5K9N20LL

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Specifications

Gate Charge(Qg)20nC
Drain to Source Voltage200V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation1.87W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)470mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)680pF
Vgs±20V

Technical details

N-Channel 200V 1.5A Surface Mount SOT-23-6L

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