GOFORD G58N06K

GOFORD · FETs & Power MOSFETs · MPN G58N06K

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Specifications

Gate Charge(Qg)36nC
Drain to Source Voltage60V
Output Capacitance(Coss)155pF
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation71W
Reverse Transfer Capacitance (Crss@Vds)139pF
RDS(on)10.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.841nF
Vgs±20V

Technical details

N-Channel 60V 58A 71W Surface Mount TO-252

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