GOFORD · FETs & Power MOSFETs · MPN G58N06F
No reviews yet — be the first to review GOFORD G58N06F.
| Gate Charge(Qg) | 75nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 161pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 44W |
| Reverse Transfer Capacitance (Crss@Vds) | 143pF |
| RDS(on) | 10mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.006nF |
| Vgs | ±20V |
N-Channel 60V 35A 44W Through Hole TO-220F