GOFORD G50N03K

GOFORD · FETs & Power MOSFETs · MPN G50N03K

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Specifications

Gate Charge(Qg)16.6nC
Drain to Source Voltage30V
Output Capacitance(Coss)228pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)184pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.245nF
Vgs±20V

Technical details

N-Channel 30V 65A 48W Surface Mount TO-252

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