GOFORD · FETs & Power MOSFETs · MPN G50N03J
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| Gate Charge(Qg) | 16.6nC |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 232pF |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.45V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 185pF |
| RDS(on) | 5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.255nF |
| Vgs | ±20V |
N-Channel 30V 65A 48W Through Hole TO-251