GOFORD G50N03D5

GOFORD · FETs & Power MOSFETs · MPN G50N03D5

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Specifications

Gate Charge(Qg)38.4nC
Drain to Source Voltage30V
Output Capacitance(Coss)338pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation25.5W
Reverse Transfer Capacitance (Crss@Vds)316pF
RDS(on)3.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.661nF
Vgs±20V

Technical details

N-Channel 30V 50A 20W Surface Mount DFN-8L(5x6)

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