GOFORD G500P03IE

GOFORD · FETs & Power MOSFETs · MPN G500P03IE

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Specifications

Gate Charge(Qg)13nC
Drain to Source Voltage30V
Output Capacitance(Coss)79pF
Current - Continuous Drain(Id)4.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)62pF
RDS(on)43mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)680pF
Vgs±12V

Technical details

P-Channel 30V 4.6A 1.4W Surface Mount SOT-23

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