GOFORD · FETs & Power MOSFETs · MPN G4N50J
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| Gate Charge(Qg) | 12nC |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 40pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.2V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 340pF |
| Vgs | ±30V |
N-Channel 500V 4A 30W Through Hole TO-251