GOFORD G4953S

GOFORD · FETs & Power MOSFETs · MPN G4953S

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Specifications

Current - Continuous Drain(Id)5A
Pd - Power Dissipation2.5W
RDS(on)37mΩ@10V
Gate Threshold Voltage (Vgs(th))1.4V
Drain to Source Voltage30V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)66pF
Number2 P-Channel
Input Capacitance(Ciss)592pF
Gate Charge(Qg)11nC
Vgs±20V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 30V 5A 2.5W Surface Mount SOP-8

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