GOFORD · FETs & Power MOSFETs · MPN G4616-B
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| Output Capacitance(Coss) | 122pF;100pF |
|---|---|
| Pd - Power Dissipation | 2W;2.8W |
| Configuration | - |
| Drain to Source Voltage | 40V |
| Gate Charge(Qg) | 12nC;13nC |
| Current - Continuous Drain(Id) | 8A;7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF;65pF |
| RDS(on) | 15mΩ@10V;28mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 415pF;520pF |
N-Channel+P-Channel Array 40V 8A 2.8W Surface Mount SOP-8