GOFORD G45P40T

GOFORD · FETs & Power MOSFETs · MPN G45P40T

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Specifications

Gate Charge(Qg)42nC
Drain to Source Voltage40V
Output Capacitance(Coss)343pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)281pF
RDS(on)10.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.269nF
Vgs±20V

Technical details

P-Channel 40V 45A 80W Through Hole TO-220

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