GOFORD G45P40D3

GOFORD · FETs & Power MOSFETs · MPN G45P40D3

No reviews yet — be the first to review GOFORD G45P40D3.

Specifications

Drain to Source Voltage40V
Gate Charge(Qg)60nC
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation32W
Reverse Transfer Capacitance (Crss@Vds)290pF
RDS(on)10.8mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.3nF
Vgs±20V

Technical details

P-Channel 40V 30A 32W Surface Mount DFN3x3-8L

Related FETs & Power MOSFETs