GOFORD G45P02D3

GOFORD · FETs & Power MOSFETs · MPN G45P02D3

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Specifications

Gate Charge(Qg)44nC
Drain to Source Voltage20V
Output Capacitance(Coss)642pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation29W
Reverse Transfer Capacitance (Crss@Vds)593pF
RDS(on)6mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.867nF
Vgs±12V

Technical details

P-Channel 20V 45A 29W Surface Mount DFN3x3-8L

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