GOFORD G450P15M

GOFORD · FETs & Power MOSFETs · MPN G450P15M

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Specifications

Gate Charge(Qg)177nC
Drain to Source Voltage150V
Output Capacitance(Coss)301pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)272pF
RDS(on)33mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7.661nF
Vgs±20V

Technical details

P-Channel 150V 120A 200W Surface Mount TO-263

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