GOFORD G450N10D52

GOFORD · FETs & Power MOSFETs · MPN G450N10D52

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Specifications

Operating Temperature-55℃~+150℃
Output Capacitance(Coss)59pF
Configuration-
Current - Continuous Drain(Id)35A
Pd - Power Dissipation80W
RDS(on)38mΩ@10V
Gate Threshold Voltage (Vgs(th))2.1V
Drain to Source Voltage100V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)57pF
Number2 N-Channel
Input Capacitance(Ciss)2.196nF

Technical details

N-Channel Array 100V 35A 80W Surface Mount DFN5x6-8L

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