GOFORD G450N10D5

GOFORD · FETs & Power MOSFETs · MPN G450N10D5

No reviews yet — be the first to review GOFORD G450N10D5.

Specifications

Output Capacitance(Coss)55pF
Pd - Power Dissipation80W
Configuration-
Gate Charge(Qg)47nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
RDS(on)37mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)53pF
Number1 N-channel
Input Capacitance(Ciss)2.2nF

Technical details

80W 100V 35A 2V 37mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs