GOFORD G400P06S2

GOFORD · FETs & Power MOSFETs · MPN G400P06S2

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Specifications

Output Capacitance(Coss)120pF
Pd - Power Dissipation2.5W
Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)44nC
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)33mΩ@10V
Number2 P-Channel
Input Capacitance(Ciss)2.6nF

Technical details

2.5W 60V 6A 2.4V 33mΩ@10V 2 P-Channel P-Channel SOP-8D Single FETs, MOSFETs RoHS

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