GOFORD G400P06S

GOFORD · FETs & Power MOSFETs · MPN G400P06S

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)44nC
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)33mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.6nF
Vgs±20V

Technical details

P-Channel 60V 6A 1.7W Surface Mount SOP-8

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