GOFORD G400P06K

GOFORD · FETs & Power MOSFETs · MPN G400P06K

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Specifications

Gate Charge(Qg)45nC
Drain to Source Voltage60V
Output Capacitance(Coss)113pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation66W
Reverse Transfer Capacitance (Crss@Vds)111pF
RDS(on)31mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.543nF
Vgs±20V

Technical details

P-Channel 60V 25A 66W Surface Mount TO-252

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