GOFORD G3K8N15HE

GOFORD · FETs & Power MOSFETs · MPN G3K8N15HE

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Specifications

Gate Charge(Qg)20nC
Drain to Source Voltage150V
Output Capacitance(Coss)17pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.16W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)300mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)558pF
Vgs±20V

Technical details

N-Channel 150V 2A 2.16W Surface Mount SOT-223

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