GOFORD G370P10K

GOFORD · FETs & Power MOSFETs · MPN G370P10K

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Specifications

Gate Charge(Qg)98nC
Drain to Source Voltage100V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)34A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation94W
RDS(on)32mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)155pF
Number1 P-Channel
Input Capacitance(Ciss)5.4nF
Vgs±20V

Technical details

P-Channel 100V 34A 94W Surface Mount TO-252

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