GOFORD G35P04D5

GOFORD · FETs & Power MOSFETs · MPN G35P04D5

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Specifications

Gate Charge(Qg)60nC
Drain to Source Voltage40V
Output Capacitance(Coss)341pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)283pF
RDS(on)11mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.224nF
Vgs±20V

Technical details

P-Channel 40V 35A 35W Surface Mount DFN5x6-8

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