GOFORD · FETs & Power MOSFETs · MPN G35N02S
No reviews yet — be the first to review GOFORD G35N02S.
| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 18nC |
| Output Capacitance(Coss) | 224pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 2.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 215pF |
| RDS(on) | 7mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
| Vgs | ±12V |
N-Channel 20V 12A Surface Mount SOP-8