GOFORD G35N02K

GOFORD · FETs & Power MOSFETs · MPN G35N02K

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)24nC
Output Capacitance(Coss)212pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)195pF
RDS(on)7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.38nF
Vgs±12V

Technical details

N-Channel 20V 35A 40W Surface Mount TO-252

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