GOFORD G350P02LLE

GOFORD · FETs & Power MOSFETs · MPN G350P02LLE

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Specifications

Gate Charge(Qg)17.2nC
Drain to Source Voltage20V
Output Capacitance(Coss)133pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)118pF
RDS(on)27mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.126nF
Vgs±10V

Technical details

P-Channel 20V 4.5A 1.4W Surface Mount SOT-23-6

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