GOFORD G350N06D32

GOFORD · FETs & Power MOSFETs · MPN G350N06D32

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Specifications

Current - Continuous Drain(Id)10A
Pd - Power Dissipation20W
RDS(on)29mΩ@10V
Gate Threshold Voltage (Vgs(th))1.7V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)54pF
Number2 N-Channel
Input Capacitance(Ciss)1.33nF
Gate Charge(Qg)25nC
Vgs±20V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 60V 10A 20W Surface Mount DFN3x3-8L

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