GOFORD G3416

GOFORD · FETs & Power MOSFETs · MPN G3416

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Specifications

Output Capacitance(Coss)138pF
Pd - Power Dissipation1.3W
Configuration-
Gate Charge(Qg)15nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Reverse Transfer Capacitance (Crss@Vds)123pF
RDS(on)16mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)748pF

Technical details

N-Channel 20V 24A 1.3W Surface Mount SOT-23

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