GOFORD G3415LL

GOFORD · FETs & Power MOSFETs · MPN G3415LL

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)10nC
Current - Continuous Drain(Id)4A
Output Capacitance(Coss)133pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.4W
RDS(on)28mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)122pF
Number1 P-Channel
Input Capacitance(Ciss)1.106nF
Vgs±10V

Technical details

P-Channel 20V 4A 1.4W Surface Mount SOT-23-6

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