GOFORD G33N03D52

GOFORD · FETs & Power MOSFETs · MPN G33N03D52

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Specifications

Gate Charge(Qg)20nC
Drain to Source Voltage30V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)33A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation29W
Reverse Transfer Capacitance (Crss@Vds)134pF
RDS(on)8mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)905pF
Vgs±20V

Technical details

N-Channel 30V 33A 29W Surface Mount DFN5x6-8L

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