GOFORD G33N03D3

GOFORD · FETs & Power MOSFETs · MPN G33N03D3

No reviews yet — be the first to review GOFORD G33N03D3.

Specifications

Current - Continuous Drain(Id)28A
Pd - Power Dissipation20W
RDS(on)9mΩ@10V
Gate Threshold Voltage (Vgs(th))1.4V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)134pF
Number2 N-Channel
Input Capacitance(Ciss)905pF
Gate Charge(Qg)16nC
Vgs±20V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 33A 20W Surface Mount DFN3.3x3.3-8L

Related FETs & Power MOSFETs