GOFORD G30N04D3

GOFORD · FETs & Power MOSFETs · MPN G30N04D3

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Specifications

Gate Charge(Qg)30nC
Drain to Source Voltage40V
Output Capacitance(Coss)176pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)166pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.94nF
Vgs±20V

Technical details

N-Channel 40V 30A 19.8W Surface Mount DFN3x3-8L

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