GOFORD G30N03D3-L

GOFORD · FETs & Power MOSFETs · MPN G30N03D3-L

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Specifications

Gate Charge(Qg)18nC
Drain to Source Voltage30V
Output Capacitance(Coss)182pF
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)143pF
RDS(on)5.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.062nF
Vgs±20V

Technical details

30V 28A 20W Surface Mount DFN3x3-8L

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