GOFORD G30N03D3-BQ

GOFORD · FETs & Power MOSFETs · MPN G30N03D3-BQ

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Specifications

Output Capacitance(Coss)230pF
Pd - Power Dissipation25W
Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)13nC
Current - Continuous Drain(Id)42A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Reverse Transfer Capacitance (Crss@Vds)185pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.26nF

Technical details

N-Channel 30V 42A 25W Surface Mount DFN3x3-8L

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