GOFORD G3035L

GOFORD · FETs & Power MOSFETs · MPN G3035L

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12.5nC
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)48mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)650pF
Vgs±20V

Technical details

P-Channel 30V 4.1A 1.4W Surface Mount SOT-23

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