GOFORD G3035

GOFORD · FETs & Power MOSFETs · MPN G3035

No reviews yet — be the first to review GOFORD G3035.

Specifications

Gate Charge(Qg)13nC
Drain to Source Voltage30V
Output Capacitance(Coss)84pF
Current - Continuous Drain(Id)4.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)74pF
RDS(on)41mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)607pF
Vgs±20V

Technical details

P-Channel 30V 4.1A 1.4W Surface Mount SOT-23

Related FETs & Power MOSFETs