GOFORD G2N7002X

GOFORD · FETs & Power MOSFETs · MPN G2N7002X

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Specifications

Drain to Source Voltage60V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)340mA
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)1.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)40pF
Vgs±20V
TypeN-Channel

Technical details

N-Channel 60V 340mA 0.15W Surface Mount SOT-523

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