GOFORD G2K8P15S

GOFORD · FETs & Power MOSFETs · MPN G2K8P15S

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Specifications

Gate Charge(Qg)11nC
Drain to Source Voltage150V
Output Capacitance(Coss)39pF
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)277mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)966pF
Vgs±20V

Technical details

P-Channel 150V 2.2A 2.5W Surface Mount SOP-8

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